how much current flowed in what direction through it.
Thin films of oxygen-depleted titanium dioxide
between titanium and platinum electrodes.
Doped polymer dielectric-like materials.
Thin films of molybdenum oxide and molybdenum disulfide
between silver electrodes on a plastic foil.
Transition metal dichalcogenide monolayers
forming a vertical metal-insulator-metal device.
Thin ferroelectric barrier
sandwiched between two metallic electrodes.
Vertically aligned carbon nanotubes
with non-uniform elastic strain and piezoelectric field changes.
Movable wall between magnetized domains with different spins.
Germanium selenium layers separated by a silver layer
with tungsten electrodes.
Devices using memristors could replace transistors
and, with greater density, speed, and energy economy,
form non-volatile dynamic random-access memories.
Non-linear symmetry
The non-linear resistor
dynamically relates voltage to current
dv = R di
The non-linear capacitor
dynamically relates charge to voltage
dq = C dv
The non-linear inductor
dynamically relates magnetic flux to current
dφ = L di
The non-linear memristor must exist
to dynamically relate magnetic flux to charge
dφ = M dq
Ideal memristor
The ideal memristor
will never exist
as a working device
but inevitably exhibit
capacitance and resistance.
Similarly, we
struggle to relate
daily and hourly
compromising
without abandoning our dreams.
Forty-seven years later, technology companies are still working on ways
to commercialize Leon Chua’s invention of the memrister.
Some scientists assert that devices that are now in development
are not real memristors at all.
Forty-seven years later, technology companies are still working on ways to commercialize Leon Chua’s invention of the memrister. Some scientists assert that devices that are now in development are not real memristors at all.
See also in The book of science:
Readings in wikipedia: